Transistors RF GaAs DC-18.0GHz 0.3mm MESFET

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Product Information

Technology Type	HEMT
Frequency	18 GHz
Gain	7 dB
Noise Figure	2.5 dB
Forward Transconductance gFS (Max / Min)	6 mS
Drain Source Voltage VDS	8 V
Gate-Source Breakdown Voltage	- 6 V
Continuous Drain Current	100 mA
Maximum Operating Temperature	+ 150 C
Power Dissipation	700 mW
Mounting Style	SMD/SMT
Package / Case	SMD/SMT

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