Transistors RF GaAs GaAs LN MMIC

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Product Information

Technology Type	HEMT
Frequency	1.8 GHz
Gain	14.5 dB
Drain Source Voltage VDS	9 V
Gate-Source Breakdown Voltage	- 6 V
Continuous Drain Current	650 mA
Maximum Operating Temperature	+ 150 C
Power Dissipation	900 mW
Mounting Style	SMD/SMT
Package / Case	MW-6
P1dB	23.5 dBm
Packaging	Reel

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