Transistors RF GaAs DC-12GHz 1mm Pwr pHEMT (0.35um)

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Product Information

Technology Type	pHEMT
Frequency	12 GHz
Gain	11 dB
Forward Transconductance gFS (Max / Min)	375 mS
Drain Source Voltage VDS	12 V
Gate-Source Breakdown Voltage	- 14 V
Continuous Drain Current	300 mA
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package / Case	4-Pin-Die
P1dB	30 dBm

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