Transistors RF MOSFET Power 100-500MHz 100Watts 28Volt 10dB

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Product Information

Configuration	Dual
Transistor Polarity	N-Channel
Frequency	100 MHz to 500 MHz
Gain	10 dB at 500 MHz
Output Power	100 W
Drain-Source Breakdown Voltage	65 V
Continuous Drain Current	12 A
Gate-Source Breakdown Voltage	+/- 20 V
Maximum Operating Temperature	+ 150 C
Package / Case	Case 744A-01
Packaging	Tray
Forward Transconductance gFS (Max / Min)	1.5 S
Minimum Operating Temperature	- 55 C
Mounting Style	SMD/SMT
Power Dissipation	250 W

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