Transistors RF MOSFET Power 5-500MHz 4Watts 28Volt Gain 16dB

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Product Information

Configuration	Single
Transistor Polarity	N-Channel
Frequency	500 MHz
Gain	18 dB
Output Power	4 W
Drain-Source Breakdown Voltage	65 V
Continuous Drain Current	1 A
Gate-Source Breakdown Voltage	+/- 20 V
Maximum Operating Temperature	+ 150 C
Package / Case	Case 249-06
Packaging	Tray
Minimum Operating Temperature	- 65 C
Mounting Style	SMD/SMT
Power Dissipation	24 W

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