Transistors RF MOSFET Power 100-500MHz 150Watts 28Volt Gain 8dB

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Product Information

Configuration	Dual
Transistor Polarity	N-Channel
Frequency	100 MHz to 500 MHz
Gain	8 dB at 500 MHz
Output Power	150 W
Drain-Source Breakdown Voltage	65 V
Continuous Drain Current	16 A
Gate-Source Breakdown Voltage	+/- 20 V
Maximum Operating Temperature	+ 150 C
Package / Case	Case 375-04
Packaging	Tray
Minimum Operating Temperature	- 65 C
Mounting Style	SMD/SMT
Power Dissipation	389 W

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