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Transistors RF MOSFET Power .5-2GHz 30W 28Volts LDMOS

Weight:
0.0005kg
Product Range:
Transistors - RF FET

Product Information

ConfigurationSingle
Transistor PolarityN-Channel
Frequency0.5 GHz to 2 GHz
Gain10 dB
Output Power30 W
Drain-Source Breakdown Voltage65 V
Continuous Drain Current4.25 A
Gate-Source Breakdown Voltage15 V
Maximum Operating Temperature+ 150 C
Package / CasePowerBand
PackagingTray
Forward Transconductance gFS (Max / Min)3 S
Mounting StyleSMD/SMT
Power Dissipation135 W


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