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Home Semiconductors - Discretes Transistors - RF FET Trans RF MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R

Trans RF MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R

Trans RF MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R

The actual product may differ from image shown

Part No.:: 3SK293TE85LF
Manufacturer:: Toshiba
Product Range:: Transistors - RF FET
Datasheet:: 3SK293TE85LF

Product Information

Polarity	N
Reverse Capacitance (Typ)	16@6V(pF)
Noise Figure (Max)	2.5(dB)
Continuous Drain Current	0.03(A)
Mounting	Surface Mount
Application	UHF
Screening Level	Military
Type	RF MOSFET
Gate-Source Voltage (Max)	8 V
Input Capacitance (Typ)@Vds	2@6V(pF)
Package Type	USQ
Drain Source Voltage (Max)	12.5(V)
Channel Type	N
Operating Temp Range	-55C to 125C
Pin Count	4
Channel Mode	Enhancement
Drain-Source On-Volt	12.5 V
Packaging	Tape and Reel
Power Dissipation	0.1 W
Rad Hardened	No
Power Gain (Typ)@Vds	22.5@6V(dB)
Power Dissipation (Max)	100(mW)
Number of Elements	1

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