RF JFET Transistors Super Lo Noise HJFET

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Product Information

Factory Pack Quantity	4000
Technology	GaAs
Product Category	RF JFET Transistors
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	- 3 V
Forward Transconductance - Min	55 mS
Brand	CEL
Id - Continuous Drain Current	70 mA
Mounting Style	SMD/SMT
Pd - Power Dissipation	165 mW
Packaging	Reel
Frequency	12 GHz
Vds - Drain-Source Breakdown Voltage	4 V
Gain	13.5 dB
Transistor Type	HFET
Package / Case	SO-1
NF - Noise Figure	0.35 dB
Maximum Operating Temperature	+ 125 C
RoHS	Details
Manufacturer	CEL

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