100 A, 1200 V, N-CHANNEL IGBT

The actual product may differ from image shown

Product Information

Status	ACTIVE
Channel Type	N-CHANNEL
Package Body Material	UNSPECIFIED
Mfr Package Description	12.60 X 12.60 MM, DIE-2
Terminal Form	NO LEAD
Package Style	UNCASED CHIP
Turn-off Time-Nom (toff)	540 ns
Collector Current-Max (IC)	100 A
Collector-emitter Voltage-Max	1200 V
Transistor Element Material	SILICON
Number of Elements	1
Turn-on Time-Nom (ton)	275 ns
Terminal Position	UPPER
Transistor Type	INSULATED GATE BIPOLAR
Package Shape	SQUARE
Configuration	SINGLE
Number of Terminals	2
Surface Mount	Yes

Offer your acceptable price, and we may make you satisfied.Your Target Price