3 A, 900 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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Product Information

Terminal Form	THROUGH-HOLE
Avalanche Energy Rating (Eas)	4.5 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	3 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	4.8 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	10 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	900 V
Transistor Application	SWITCHING
Case Connection	ISOLATED
Mfr Package Description	HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	3
Terminal Position	SINGLE
Number of Elements	1
Package Style	FLANGE MOUNT

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