32 A, 30 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET

The actual product may differ from image shown

Product Information

Terminal Form	NO LEAD
Avalanche Energy Rating (Eas)	28.8 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	UNSPECIFIED
Transistor Element Material	SILICON
Drain Current-Max (ID)	32 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.0018 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	250 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	30 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	HALOGEN AND LEAD FREE, GREENFET PACKAGE-3
Operating Mode	ENHANCEMENT
Number of Terminals	3
Terminal Position	BOTTOM
Number of Elements	1
Package Style	CHIP CARRIER

Offer your acceptable price, and we may make you satisfied.Your Target Price