128K X 8 EEPROM 5V, 200 ns, CQCC44

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Product Information

Terminal Finish	TIN LEAD
Terminal Pitch	1.27 mm
Terminal Form	NO LEAD
Operating Temperature-Max	125 Cel
Number of Words Code	128K
Write Cycle Time-Max (tWC)	10 ms
Supply Voltage-Nom (Vsup)	5 V
Temperature Grade	MILITARY
Package Shape	SQUARE
Status	ACTIVE
Operating Temperature-Min	-55 Cel
Number of Words	131072 words
Package Body Material	CERAMIC, METAL-SEALED COFIRED
Number of Functions	1
Access Time-Max (tACC)	200 ns
Memory Density	1.05E6 deg
Supply Voltage-Max (Vsup)	5.5 V
Supply Voltage-Min (Vsup)	4.5 V
Organization	128K X 8
Memory Width	8
Surface Mount	Yes
Parallel/Serial	PARALLEL
Mfr Package Description	CERAMIC, LCC-44
Operating Mode	ASYNCHRONOUS
Number of Terminals	44
Terminal Position	QUAD
Technology	CMOS
Package Style	CHIP CARRIER
Memory IC Type	EEPROM 5V

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