120 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA

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Product Information

Terminal Form	WIRE
Qualification Status	COMMERCIAL
Package Shape	ROUND
Status	Transferred
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	0.1200 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	20 ohm
JESD-30 Code	O-PBCY-W3
DS Breakdown Voltage-Min	200 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	NO
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	P-CHANNEL
JEDEC-95 Code	TO-226AA
Package Style	CYLINDRICAL
Feedback Cap-Max (Crss)	10 pF
Terminal Position	BOTTOM
Number of Elements	1
Number of Terminals	3

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