26.1 A, 1200 V, 0.22 ohm, N-CHANNEL, SiC, POWER, MOSFET

The actual product may differ from image shown

Product Information

Terminal Form	NO LEAD
Avalanche Energy Rating (Eas)	1100 mJ
Package Shape	SQUARE
Status	ACTIVE
Package Body Material	UNSPECIFIED
Transistor Element Material	SILICON CARBIDE
Drain Current-Max (ID)	26.1 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.2200 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	56 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	1200 V
Transistor Application	SWITCHING
Surface Mount	Yes
Mfr Package Description	3.10 X 3.10 MM, ROHS COMPLIANT, DIE-3
Operating Mode	ENHANCEMENT
Number of Terminals	3
Terminal Position	UPPER
Number of Elements	1
Package Style	UNCASED CHIP

Offer your acceptable price, and we may make you satisfied.Your Target Price