All

SIGN IN or REGISTER

Your cart is empty

Home Semiconductors - ICs Memory 128K X 18 CACHE SRAM, 3.5 ns, PBGA165

128K X 18 CACHE SRAM, 3.5 ns, PBGA165

128K X 18 CACHE SRAM, 3.5 ns, PBGA165

The actual product may differ from image shown

Part No.:: MT58L128L18DF-6
Manufacturer:: Cypress Semiconductor
Product Range:: Memory
Datasheet:: MT58L128L18DF-6

Product Information

Terminal Finish	TIN LEAD
Terminal Pitch	1 mm
Terminal Form	BALL
Operating Temperature-Max	70 Cel
Number of Words Code	128K
Supply Voltage-Nom (Vsup)	3.3 V
Temperature Grade	COMMERCIAL
Package Shape	RECTANGULAR
Status	ACTIVE
Operating Temperature-Min	0.0 Cel
Number of Words	131072 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Access Time-Max (tACC)	3.5 ns
Memory Density	2.36E6 deg
Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	3.14 V
Organization	128K X 18
Memory Width	18
Surface Mount	Yes
Parallel/Serial	PARALLEL
Mfr Package Description	FBGA-165
Operating Mode	SYNCHRONOUS
Number of Terminals	165
Terminal Position	BOTTOM
Technology	CMOS
Package Style	GRID ARRAY, THIN PROFILE
Memory IC Type	CACHE SRAM

Target Price

Offer your acceptable price, and we may make you satisfied.Your Target Price

Technical Support

Technical Support

Customer Reviews

Customer Q&A Exchange