MOSFET 20V 4A 2.8W

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Product Information

Transistor Polarity	P-Channel
Drain-Source Breakdown Voltage	- 20 V
Gate-Source Breakdown Voltage	10 V
Continuous Drain Current	- 4 A
Resistance Drain-Source RDS (on)	0.034 Ohms
Configuration	Single
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package / Case	SC-70-6
Packaging	Reel
Forward Transconductance gFS (Max / Min)	16 S
Gate Charge Qg	22 nC
Minimum Operating Temperature	- 55 C
Power Dissipation	2.8 W

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