Transistors RF MOSFET Power N-Chan RF Pwr Mosfet 500V 44A

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Product Information

Configuration	Single
Transistor Polarity	N-Channel
Frequency	1 MHz to 30 MHz
Drain-Source Breakdown Voltage	500 V
Continuous Drain Current	48 A
Gate-Source Breakdown Voltage	+/- 20 V
Maximum Operating Temperature	+ 150 C
Package / Case	DE475
Forward Transconductance gFS (Max / Min)	14 S
Gate Charge Qg	155 nC
Mounting Style	SMD/SMT
Power Dissipation	4.5 W
Resistance Drain-Source RDS (on)	0.13 Ohms

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