Transistors RF MOSFET Power 5-400MHz 100Watts 28Volt Gain 12dB

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Product Information

Configuration	Dual
Transistor Polarity	N-Channel
Frequency	400 MHz
Gain	12 dB
Output Power	100 W
Drain-Source Breakdown Voltage	65 V
Continuous Drain Current	16 A
Gate-Source Breakdown Voltage	+/- 40 V
Maximum Operating Temperature	+ 150 C
Package / Case	Case 744A-01
Packaging	Tray
Minimum Operating Temperature	- 65 C
Mounting Style	SMD/SMT
Power Dissipation	270 W

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