Transistors RF MOSFET Power 5-175MHz 150Watts 50Volt Gain 18dB

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Product Information

Configuration	Single
Transistor Polarity	N-Channel
Frequency	175 MHz
Gain	13 dB
Output Power	150 W
Drain-Source Breakdown Voltage	125 V
Continuous Drain Current	16 A
Gate-Source Breakdown Voltage	+/- 40 V
Maximum Operating Temperature	+ 150 C
Package / Case	Case 211-11
Packaging	Tray
Minimum Operating Temperature	- 65 C
Mounting Style	SMD/SMT
Power Dissipation	300 W

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