Transistors RF GaAs GaAs Power MMIC

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Product Information

Technology Type	HEMT
Frequency	1.8 GHz
Gain	9.5 dB
Noise Figure	1.72 dB
Drain Source Voltage VDS	9 V
Gate-Source Breakdown Voltage	- 6 V
Continuous Drain Current	1 A
Maximum Operating Temperature	+ 150 C
Power Dissipation	2 W
Mounting Style	SMD/SMT
Package / Case	SOT-223
P1dB	26.5 dBm
Packaging	Reel

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