IGBT Array & Module Transistor, N Channel, 150 A, 2.35 V, 500 W,

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Product Information

Transistor Polarity:	N Channel
Collector Emitter Voltage V(br)ceo:	600 V
Collector Emitter Voltage Vces:	2.35 V
No. of Pins:	7
DC Collector Current:	150 A
Power Dissipation Pd:	500 W
Transistor Case Style:	Module
Operating Temperature Max:	150 C
SVHC:	To Be Advised

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