IGBT Array & Module Transistor, N Channel, 200 A, 2.6 V, 1.5 kW,

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Product Information

Transistor Polarity:	N Channel
Collector Emitter Voltage V(br)ceo:	1.2 kV
Collector Emitter Voltage Vces:	2.6 V
No. of Pins:	7
DC Collector Current:	200 A
Power Dissipation Pd:	1.5 kW
Transistor Case Style:	Module
Operating Temperature Max:	150 C
SVHC:	To Be Advised
Transistor Type:	IGBT Module

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