TRANS SJT 1.2KV 10A

The actual product may differ from image shown

Product Information

Category	Discrete Semiconductor Products
FET Feature	Super Junction
Online Catalog	Silicon Carbide (SiC) Super Junction FETs
Product Photos	TO263-3
Family	FETs - Single
Vgs(th) (Max) @ Id	-
Input Capacitance (Ciss) @ Vds	1403pF @ 800V
Series	-
Standard Package	50
Supplier Device Package	-
Datasheets	GA10JT12-263
Rds On (Max) @ Id, Vgs	120 mOhm @ 10A
FET Type	Silicon Carbide, Normally Off
Packaging	Tube
Power - Max	170W
Package / Case	-
Mounting Type	Surface Mount
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25 C	25A (Tc)
Other Names	1242-1186 GA10JT12-220ISO GA10JT12220ISO
Gate Charge (Qg) @ Vgs	-

Offer your acceptable price, and we may make you satisfied.Your Target Price