Phototransistor IR Chip Silicon NPN Transistor 870nm 2-Pin T-1 3

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Product Information

Polarity	NPN
Collector Current (DC)	0.05 A
Collector Current (DC) (Max)	0.05 A
Collector-Emitter Voltage	70 V
Mounting	Through Hole
Collector-Emitter Sat Volt (max)	0.15 V
Half-Intensity Angle	20 deg
Fall Time	10000/12000 ns
Emitter-Collector Voltage (Max)	7 V
Operating Temperature Classification	Industrial
Package Type	T-1 3/4
Dark Current	200 nA
Dark Current (Max)	200 nA
Operating Temp Range	-40C to 100C
Light Current	8000/12500 uA
Pin Count	2
Peak Wavelength	870 nm
Power Dissipation	0.2 W
Rad Hardened	No
Phototransistor Type	Phototransistor
Rise Time	10000/12000 ns
Number of Elements	1

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