X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET

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Product Information

Status	DISCONTINUED
Terminal Finish	TIN LEAD
Package Body Material	CERAMIC, METAL-SEALED COFIRED
Channel Type	N-CHANNEL
Terminal Form	GULL WING
Operating Mode	DEPLETION
Package Style	DISK BUTTON
Drain Current-Max (ID)	0.0850 A
Transistor Application	SWITCHING
Power Gain-Min (Gp)	8.4 dB
Highest Frequency Band	X BAND
Number of Elements	1
Transistor Element Material	GALLIUM ARSENIDE
FET Technology	HIGH ELECTRON MOBILITY
Terminal Position	RADIAL
Transistor Type	RF SMALL SIGNAL
Package Shape	ROUND
Configuration	SINGLE
Number of Terminals	4
DS Breakdown Voltage-Min	7 V
Surface Mount	Yes

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