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0.5 A, 230 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
2SK1194-4100
Manufacturer:
Product Range:
Transistors (BJT)

Product Information

StatusDISCONTINUED
Channel TypeN-CHANNEL
Package Body MaterialPLASTIC/EPOXY
Mfr Package DescriptionEPACK-3
Terminal FormTHROUGH-HOLE
Power Dissipation Ambient-Max6 W
Package StyleIN-LINE
Transistor Element MaterialSILICON
Operating ModeENHANCEMENT
Drain Current-Max (ID)0.5000 A
Case ConnectionDRAIN
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Terminal PositionSINGLE
Transistor TypeGENERAL PURPOSE POWER
Package ShapeRECTANGULAR
ConfigurationSINGLE
Drain-source On Resistance-Max8 ohm
Number of Terminals3
DS Breakdown Voltage-Min230 V
Number of Elements1


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