3 A, 500 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Finish	TIN LEAD
Terminal Form	GULL WING
Package Shape	RECTANGULAR
Status	DISCONTINUED
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	3 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	2.3 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	9 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	500 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	EPACK-3
Operating Mode	ENHANCEMENT
Number of Terminals	2
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

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