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1.5 A, 40 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

Part No.:
VN0104N5
Manufacturer:
Product Range:
Transistors (BJT)

Product Information

Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Power Dissipation Ambient-Max15 W
Operating Temperature-Max150 Cel
Qualification StatusCOMMERCIAL
JESD-609 Codee0
Package ShapeRECTANGULAR
StatusDiscontinued
Package Body MaterialPLASTIC/EPOXY
Turn-on Time-Max (ton)13 ns
Transistor Element MaterialSILICON
Drain Current-Max (ID)1.5 A
Drain Current-Max (Abs) (ID)1.5 A
Sub CategoryFET General Purpose Power
Peak Reflow Temperature (Cel)NOT SPECIFIED
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max3 ohm
Moisture Sensitivity LevelNOT SPECIFIED
Pulsed Drain Current-Max (IDM)2.5 A
Turn-off Time-Max (toff)17 ns
DS Breakdown Voltage-Min40 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Transistor ApplicationSWITCHING
Surface MountNO
JEDEC-95 CodeTO-220AB
Case ConnectionDRAIN
Mfr Package DescriptionTO-220, 3 PIN
Operating ModeENHANCEMENT MODE
Polarity/Channel TypeN-CHANNEL
Number of Terminals3
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Power Dissipation-Max (Abs)15 W
JESD-30 CodeR-PSFM-T3
Terminal PositionSINGLE
Feedback Cap-Max (Crss)8 pF
Number of Elements1
Package StyleFLANGE MOUNT


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