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0.25 A, 500 V, 30 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part No.:
VP0650N5
Manufacturer:
Product Range:
Transistors (BJT)

Product Information

Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Power Dissipation Ambient-Max45 W
Operating Temperature-Max150 Cel
Qualification StatusCOMMERCIAL
JESD-609 Codee0
Package ShapeRECTANGULAR
Additional FeatureHIGH INPUT IMPEDANCE
StatusDiscontinued
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)0.2500 A
Sub CategoryOther Transistors
Peak Reflow Temperature (Cel)NOT SPECIFIED
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max30 ohm
Moisture Sensitivity LevelNOT SPECIFIED
Pulsed Drain Current-Max (IDM)0.5000 A
DS Breakdown Voltage-Min500 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Transistor ApplicationSWITCHING
Surface MountNO
JEDEC-95 CodeTO-220AB
Case ConnectionDRAIN
Mfr Package DescriptionTO-220, 3 PIN
Operating ModeENHANCEMENT MODE
Polarity/Channel TypeP-CHANNEL
Number of Terminals3
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Power Dissipation-Max (Abs)45 W
JESD-30 CodeR-PSFM-T3
Terminal PositionSINGLE
Number of Elements1
Package StyleFLANGE MOUNT


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