X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET

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Product Information

Terminal Finish	GOLD
Terminal Form	FLAT
Power Dissipation Ambient-Max	0.2000 W
Package Shape	ROUND
Status	ACTIVE
Package Body Material	CERAMIC, METAL-SEALED COFIRED
Transistor Element Material	GALLIUM ARSENIDE
Power Gain-Min (Gp)	11.5 dB
Drain Current-Max (ID)	0.0600 A
Configuration	SINGLE
Transistor Type	RF SMALL SIGNAL
Channel Type	N-CHANNEL
FET Technology	HIGH ELECTRON MOBILITY
DS Breakdown Voltage-Min	3.5 V
Surface Mount	Yes
Mfr Package Description	MICRO-X-4
Operating Mode	DEPLETION
Number of Terminals	4
Highest Frequency Band	X BAND
Terminal Position	RADIAL
Number of Elements	1
Package Style	DISK BUTTON

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