RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz

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Product Information

Vds - Drain-Source Breakdown Voltage	32 V
Transistor Polarity	N-Channel
Development Kit	TGF2819-FS/FL, EVAL BOARD
Part # Aliases	1118705 772-TGF2819-FS-EVB1
Mounting Style	SMD/SMT
Product Category	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	- 2.9 V
Maximum Drain Gate Voltage	145 V
Brand	TriQuint (Qorvo)
Gain	14 dB
Configuration	Single
Maximum Operating Temperature	+ 85 C
Manufacturer	Qorvo
Transistor Type	HEMT
Operating Temperature Range	- 40 C to + 85 C
Id - Continuous Drain Current	7.32 A
Output Power	100 W
RoHS	Details
Packaging	Tray
Frequency	3.5 GHz
Minimum Operating Temperature	- 40 C
Pd - Power Dissipation	86 W
Technology	GaN SiC

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