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Home Semiconductors - ICs RF RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN

RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN

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Product Information

Mounting Style	SMD/SMT
Product Category	RF JFET Transistors
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	- 2.7 V
Development Kit	TGF3015-SM-EVB1
Brand	TriQuint (Qorvo)
Id - Continuous Drain Current	557 mA
Pd - Power Dissipation	15.3 W
Packaging	Tray
Frequency	0.03 GHz to 3 GHz
Vds - Drain-Source Breakdown Voltage	32 V
Gain	17.1 dB
Transistor Type	HEMT
Package / Case	QFN-EP-16
Output Power	11 W
Part # Aliases	120419
Configuration	Single
Technology	GaN SiC
RoHS	Details
Manufacturer	Qorvo

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