MOSFET 2N-CH 1200V 168A MODULE

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Infomazioni sul prodotto

Categoy	Discrete Semiconducto Products
Packaging	Bulk
FET Feature	Silicon Carbide (SiC)
Family	FETs - Modules
Product Photos	CAS100H12AM1
Vgs(th) (Max) @ Id	3.1V @ 50mA
Series	Z-FET
Package / Case	Module
PCN Design/Specification	CAS100H12AM1 Screw Size 15/Apr/2013
Supplier Device Package	Module
Rds On (Max) @ Id, Vgs	20 mOhm @ 20A, 20V
Datasheets	CAS100H12AM1
FET Type	2 N-Channel (Half Bridge)
Standard Package	1
Power - Max	568W
Featured Product	CAS100H12AM1 Half-Bridge Module
Mounting Type	Chassis Mount
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25 C	168A
Input Capacitance (Ciss) @ Vds	9500pF @ 800V
Gate Charge (Qg) @ Vgs	-

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