MOSFET 2N-CH 1200V 180A MODULE

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Infomazioni sul prodotto

Categoy	Discrete Semiconducto Products
Packaging	Bulk
Online Catalog	BSM Series
Product Photos	BSM120D12P2C005
Family	FETs - Modules
Vgs(th) (Max) @ Id	4V @ 35.2mA
Series	-
Package / Case	Module
Supplier Device Package	Module
Rds On (Max) @ Id, Vgs	-
Datasheets	BSM180D12P2C101 BSM180D12P2C101
FET Type	2 N-Channel (Half Bridge)
Standard Package	12
Power - Max	1130W
Featured Product	Full-SiC Half-Bridge Power Modules 1200 V Silicon Carbide (SiC) Diodes
Mounting Type	*
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25 C	180A
Input Capacitance (Ciss) @ Vds	23000pF @ 10V
Gate Charge (Qg) @ Vgs	-
FET Feature	Silicon Carbide (SiC)

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