4 A, 700 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

実際の商品は画像と異なる場合があります

商品情報

Terminal Fまたはm	THROUGH-HOLE
Avalanche Energy Rating (Eas)	8 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistまたは Element Material	SILICON
Drain Current-Max (ID)	4 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	2.4 ohm
Transistまたは Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	15 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	700 V
Transistまたは Application	SWITCHING
Case Connection	ISOLATED
Mfr Package Description	ROHS COMPLIANT, TO-220CFM, 3 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	3
Terminal Position	SINGLE
Number of Elements	1
Package Style	FLANGE MOUNT

あなたの許容できる価格を提供し、私たちはあなたを満足させるかもしれません。あなたの目標価格