Trans RF MOSFET N-CH 170V 20A Box

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Reverse Capacitance (Typ)	20@150V(pF)
Channel Mode	Enhancement
Continuous Drain Current	20(A)
Output Capacitance (Typ)@Vds	180@150V(pF)
F또는ward Transconductance (Typ)	8.1(S)
Rad Hardened	No
Frequency (Max)	150(MHz)
Channel Type	N
Packaging	Box
Input Capacitance (Typ)@Vds	500@150V(pF)
Operating Temp Range	-65C to 200C
Drain Efficiency (Typ)	50(%)
Power Gain (Typ)@Vds	24(dB)
Drain Source Voltage (Max)	170(V)
Power Dissipation (Max)	350000(mW)
Screening Level	Military
Number of Elements	1
Output Power (Max)	200

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