3.3 A, 650 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

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infoumação do produto

Status	ACTIVE
Channel Type	N-CHANNEL
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Pulsed Drain Current-Max (IDM)	13.2 A
Terminal Foum	THROUGH-HOLE
Operating Mode	ENHANCEMENT
Package Style	IN-LINE
Avalanche Energy Rating (Eas)	3.1 mJ
Transistou Application	SWITCHING
Drain Current-Max (ID)	3.3 A
Transistou Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistou Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	3.6 ohm
Number of Terminals	3
DS Breakdown Voltage-Min	650 V
Number of Elements	1

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